CEN-U95 pnp silicon darlington transistor description: the central semiconductor CEN-U95 is a pnp silicon darlington transistor designed for general purpose amplifier and driver applications where high gain and high power dissipation is required. marking: full part number maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 50 v collector-emitter voltage v ces 40 v emitter-base voltage v ebo 10 v continuous collector current i c 2.0 a power dissipation p d 1.0 w power dissipation (t c =25c) p d 10 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 125 c/w thermal resistance jc 12.5 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =30v 100 na i ebo v eb =8.0v 100 na bv cbo i c =100a 50 v bv ces i c =100a 40 v bv ebo i e =10a 10 v v ce(sat) i c =1.0a, i b =2.0ma 1.5 v v be(sat) i c =1.0a, i b =2.0ma 2.0 v v be(on) v ce =5.0v, i c =1.0a 2.0 v h fe v ce =5.0v, i c =200ma 25k 150k h fe v ce =5.0v, i c =500ma 15k h fe v ce =5.0v, i c =1.0a 4k f t v ce =5.0v, i c =200ma, f=100mhz 50 mhz c ob v cb =10v, i e =0, f=1.0mhz 12 pf applications: ? designed for general purpose ampli? ers and drivers features: ? high collector current (2.0a) ? high dc current gain (25k min) to-202 case r0 (12-october 2011) www.centralsemi.com
CEN-U95 pnp silicon darlington transistor lead code: 1) emitter 2) base 3) collector marking: full part number to-202 case - mechanical outline www.centralsemi.com r0 (12-october 2011)
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